Ceramic substate with reaction-bonded silicon carbide having diamond particles

Abstract

A composite material can include: a substrate of a first reaction-bonded silicon carbide (first RB—SiC) material; and a reaction-bonded diamond-retaining silicon carbide (RB-DSiC) layer bonded to a surface of the substrate. In some aspects, the RB-DSiC layer includes diamond particles bonded with a second reaction-bonded silicon carbide (second RB—SiC) material. The diamond particles may be homogeneously distributed through the second RB—SiC or only at the surface thereof. The diamond particles can be in an ordered pattern or un-ordered pattern. For example, a CMP conditioning disc can include the composite material of one of the embodiments.

Dependencies are inferred from the claim text.