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US 2024/0347739 A1Published application
Inert atmosphere sintering of electrochemical cell stack interconnects
AssigneeBloom Energy Corporation
InventorsZigui LU, Guoliang XIAO, Tad ARMSTRONG, Keji PAN, Adam BYRD
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Abstract
A method of forming a protective layer on an interconnect for an electrochemical cell stack includes coating at least one side of the interconnect with a metal oxide powder to form a protective layer, sintering the coated interconnect in an inert atmosphere to at least partially reduce the protective layer, and oxidizing the sintered interconnect in an oxidizing atmosphere to oxidize and densify the protective layer.
Claims26
A method of forming a protective layer on an interconnect for an electrochemical cell stack, comprising:
- coating at least one side of the interconnect with a metal oxide powder to form a protective layer;
- sintering the coated interconnect in an inert atmosphere to at least partially reduce the protective layer;
- and
- oxidizing the sintered interconnect in an oxidizing atmosphere to oxidize and densify the protective layer.
1 more element
Dependencies are inferred from the claim text.