Digital simulation for semiconductor manufacturing processes

A method comprising:

• causing a plurality of individually tunable heaters to heat a plurality of regions of an electrostatic chuck to a specified temperature for a manufacturing process, wherein at least one of the plurality of individually tunable heaters is associated with at least one region of the electrostatic chuck;
• obtaining, from a trained digital simulation associated with the electrostatic chuck, a heat profile for each of the plurality of regions of the electrostatic chuck;
• simulating a wafer feature based at least in part on the obtained heat profile, the simulation predicting at least one feature of a processed wafer to be generated by the manufacturing process;
• and
• causing, based on the prediction, performance of one or more corrective actions associated with the manufacturing process.

A method comprising:

• causing a plurality of individually tunable RF field generators to generate a plasma across a plurality of regions in a processing chamber conducting a manufacturing process, wherein at least one of the plurality of individually tunable RF field generators is associated with at least one region of the processing chamber;
• obtaining, from a trained digital simulation associated with the processing chamber, a plasma profile for each of the plurality of regions of the processing chamber;
• simulating a wafer feature based at least in part on the obtained plasma profile, the simulation predicting at least one feature of a processed wafer to be generated by the manufacturing process;
• and
• causing, based on the prediction, performance of one or more corrective actions associated with the manufacturing process.

A method comprising:

• causing a plurality of individually tunable heaters to heat a plurality of regions of an electrostatic chuck to a specified temperature for a manufacturing process, wherein at least one of the plurality of individually tunable heaters is associated with at least one region of the electrostatic chuck;
• causing a plurality of individually tunable RF field generators to generate a plasma across a plurality of regions in a processing chamber conducting the manufacturing process, wherein at least one of the plurality of individually tunable RF field generators is associated with at least one region of the processing chamber;
• obtaining, from a trained digital simulation associated with the electrostatic chuck, heat profile information for each of the plurality of regions of the electrostatic chuck;
• obtaining, from a trained digital simulation associated with the processing chamber, plasma profile information for each of the plurality of regions of the processing chamber;
• simulating a wafer feature based in part on at least one of the heat profile information or the plasma profile information, the simulation predicting at least one feature of a processed wafer to be generated by the manufacturing process;
• and
• causing, based on the prediction, performance of one or more corrective actions associated with the manufacturing process.