Image sensors and method of manufacturing the same
AssigneesSamsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
InventorsSung-Yool CHOI, Seung Hun Han, Cheolmin Park, Hyeok Jun Jin
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Abstract
An image sensor includes: a semiconductor substrate including a top surface and a bottom surface; a two-dimensional (2D) material layer on the top surface of the semiconductor substrate and including molybdenum disulfide (MoS2); and a top absorber on a top surface of the 2D material layer and including graphene, wherein the semiconductor substrate includes silicon doped with a p-type impurity, the 2D material layer has n-type conductivity, and the semiconductor substrate and the 2D material layer are configured to form a p-n diode.
Claims20
An image sensor comprising:
- a semiconductor substrate comprising a top surface and a bottom surface;
- a two-dimensional (2D) material layer on the top surface of the semiconductor substrate and comprising molybdenum disulfide (MoS2);
- and
- a top absorber on a top surface of the 2D material layer and comprising graphene,
- wherein the semiconductor substrate comprises silicon doped with a p-type impurity,
- wherein the 2D material layer has n-type conductivity, and
- wherein the semiconductor substrate and the 2D material layer are configured to form a p-n diode.
An image sensor comprising:
- a semiconductor substrate comprising a top surface and a bottom surface;
- a two-dimensional (2D) material layer on the top surface of the semiconductor substrate and comprising molybdenum disulfide (MoS2);
- and
- a top absorber on a top surface of the 2D material layer and comprising graphene,
- wherein the 2D material layer comprises 2D sheets comprising from two to five layers stacked in a vertical direction on the top surface of the semiconductor substrate, and
- wherein the top absorber comprises a monolayer of graphene.
An image sensor comprising a plurality of pixels, wherein each of the plurality of pixels comprises:
- a doped region in a semiconductor substrate and comprising a p-type impurity;
- a two-dimensional (2D) material layer on a top surface of the semiconductor substrate and comprising molybdenum disulfide (MoS2);
- a top absorber on a top surface of the 2D material layer and comprising graphene;
- a first electrode on the top absorber;
- and
- a second electrode on a bottom surface of the semiconductor substrate and electrically connected to the doped region,
- wherein the 2D material layer comprises 2D sheets comprising from two to five layers stacked in a vertical direction on the top surface of the semiconductor substrate, and
- wherein the top absorber comprises a monolayer of graphene.
Dependencies are inferred from the claim text.