Semiconductor device and a method of manufacturing the same

A semiconductor device comprising:

• a first active pattern and a second active pattern extending in a first direction and adjacent to each other in a second direction, the second direction intersecting the first direction, the first and second active patterns, each including a first edge portion and a second edge portion spaced apart from each other in the first direction;
• a pair of word lines extending in the second direction to intersect the first active pattern and the second active pattern;
• a first storage node pad and a first storage node contact sequentially provided on the first edge portion of the first active pattern;
• and
• a second storage node pad and a second storage node contact sequentially provided on the second edge portion of the second active pattern,
• the first storage node pad including a same material as the first storage node contact.

A semiconductor device comprising:

• a first active pattern and a second active pattern extending in a first direction and adjacent to each other in a second direction, the second direction intersecting the first direction, the first and second active patterns, each of including first and second edge portions spaced apart from each other in the first direction and a center portion between the first and second edge portions;
• a pair of word lines extending in the second direction to intersect the first active pattern and the second active pattern;
• a first storage node pad and a first storage node contact sequentially provided on the first edge portion of the first active pattern;
• a second storage node pad and a second storage node contact sequentially provided on the second edge portion of the second active pattern;
• a first bit line extending in a third direction, the third direction intersecting the first and second directions, on the first active pattern;
• a second bit line extending in the third direction on the second active pattern;
• a fence pattern between the first storage node contact and the second storage node contact;
• landing pads on the first storage node contact and the second storage node contact;
• and
• data storage patterns on the landing pads,
• a bottom surface and a top surface of the first storage node contact located at a first level and a second level, respectively, and
• a width of the fence pattern in the third direction at the first level being less than a width of the fence pattern in the third direction at the second level.