Semiconductor devices

A semiconductor device, comprising:

• a substrate;
• first active patterns protruding from the substrate and arranged in a first direction and a second direction parallel to an upper surface of the substrate and perpendicular to each other, the first active patterns being spaced apart from each other;
• a gate structure on first sidewalls of the first active patterns, the gate structure extending in the second direction to face the first sidewalls of the first active patterns;
• a separation pattern filling an opening between second sidewalls of the first active patterns, the second sidewalls facing the first sidewalls;
• and
• a conductive liner structure protruding beyond a sidewall of the gate structure, the conductive liner structure being spaced apart from the first active patterns, and the conductive liner structure facing each of third and fourth sidewalls in the second direction of the first active patterns,
• wherein the conductive liner structure includes:
• first conductive layer patterns facing the third and fourth sidewalls of each of the first active patterns, and being spaced apart from the first active patterns;
• and
• a second conductive layer pattern electrically connected to lower portions of the first conductive layer patterns.

A vertical semiconductor device, comprising:

• a substrate;
• first active patterns protruding from the substrate, the first active patterns being arranged in a first direction and a second direction parallel to an upper surface of the substrate and perpendicular to each other, and the first active patterns being spaced apart from each other;
• a gate structure on first sidewalls of the first active patterns, the gate structure extending in the second direction to face the first sidewalls of the first active patterns, and the gate structure including a gate insulation layer and a gate pattern;
• and
• a conductive liner structure facing each of second and third sidewalls in the second direction of the first active patterns, the conductive liner structure being spaced apart from the gate pattern and the first active patterns.