Semiconductor device having stacked capacitor and method for forming the same

Abstract

A method for forming a semiconductor device includes forming a capacitor contact pad in an isolation layer. The method includes forming a first dielectric layer over the isolation layer. The method includes forming a recess in the first dielectric layer over the capacitor contact pad. The method includes conformally forming a protection layer in the recess. The method includes forming a second dielectric layer over the first dielectric layer. The method includes forming a trench through the isolation layer, the first dielectric layer, the protection layer, and the second dielectric layer to expose the capacitor contact pad. The method includes laterally etching the first dielectric layer and the second dielectric layer to enlarge the trench. The method includes conformally forming the bottom electrode layer of the stacked capacitor in the enlarged trench.

Dependencies are inferred from the claim text.