Buried contact layer for uv emitting device

A light emitting structure, comprising:

• a layered stack comprising a first set of doped layers, a second layer, a light emitting layer positioned between the first set of doped layers and the second layer, and a first electrical contact to the first set of doped layers, wherein:
• the first set of doped layers, the second layer, and the light emitting layer comprise semiconductor materials;
• the first set of doped layers comprises a first sub-layer and a second sub-layer, wherein the first or the second sub-layer is adjacent to the light emitting layer;
• the first and second sub-layers comprise a first and second superlattice, respectively;
• the first electrical contact is coupled to the second sub-layer;
• the first and second sub-layers are doped n-type;
• an electrical conductivity of the second sub-layer is higher than an electrical conductivity of the first sub-layer;
• the light emitting layer comprises a third superlattice;
• and
• the second layer comprises an electron blocking layer.