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US 2024/0266432 A1Published application
Power transistor with soft recovery body diode
AssigneeWolfspeed, Inc.
InventorsKijeong Han, Sei-Hyung Ryu, Daniel Jenner Lichtenwalner
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Abstract
A semiconductor device includes a vertical transistor and a body diode. Various improvements to the semiconductor device allow for improved performance of the body diode, in particular to reduced snappiness and increased softness.
Claims22
A semiconductor device comprising:
- a substrate;
- a drift layer on the substrate and having a first doping type;
- one or more implanted regions in the drift layer and comprising a body well having a second doping type opposite the first doping type, the one or more implanted regions configured to:
- provide a vertical transistor device configured to conduct current in a first direction;
- and
- provide a body diode configured to conduct current in a second direction opposite the first direction;
- and
- a recombination region in the drift layer, wherein at least a portion of the recombination region is between a lower portion of the body well and the substrate.
5 more elements
A semiconductor device comprising:
- a substrate;
- a drift layer on the substrate and having a first doping type;
- one or more implanted regions in the drift layer and comprising a body well having a second doping type opposite the first doping type, the one or more implanted regions configured to:
- provide a vertical transistor device configured to conduct current in a first direction;
- and
- provide a body diode configured to conduct current in a second direction opposite the first direction,
- wherein a doping concentration of the body well adjacent the drift layer is between 1×1016 cm−3 and 3×1019 cm−3, and the doping concentration of the body well decreases in proportion to a distance from the drift layer.
4 more elements
A semiconductor device comprising:
- a substrate;
- a drift layer on the substrate;
- one or more implanted regions in the drift layer, the one or more implanted regions configured to:
- provide a vertical transistor device configured to conduct current in a first direction;
- and
- provide a body diode configured to conduct current in a second direction opposite the first direction;
- and
- a recombination region adjacent the one or more implanted regions in the drift layer and comprising a higher density of minority carrier recombination centers than the drift layer.
5 more elements
Dependencies are inferred from the claim text.