Solid-state amorphous selenium avalanche detector with hole blocking layer

A photomultiplier comprising:

• a first electrode:
• a hole blocking layer comprising SrTi03;
• an a-Se photoconductive layer;
• an electron blocking layer comprising a p-type material;
• and
• a second electrode, wherein the a-Se photoconductive layer is between the hole blocking layer and the electron blocking layer, wherein the hole blocking layer is between the first electrode and the a-Se photoconductive layer and the electron blocking layer is between the second electrode and the a-Se photoconductive layer.

A method of manufacturing a photomultiplier comprising:

• fabricating a first part of the photomultiplier;
• fabricating a second part of the photomultiplier;
• and
• combining the first part and the second part, wherein fabricating the first part comprises:
• depositing an electron blocking layer comprising a p-type material on a readout device;
• and
• depositing a first portion of a-Se photoconductive layer having a first thickness of the electron blocking layer,
• wherein fabricating the second part comprises:
• depositing a hole blocking layer comprising a n-type material having a dielectric constant of at least 50 on a substrate, where the substrate comprising an electrode;
• and
• depositing a second portion of a-Se photoconductive layer having a second thickness on the hole blocking layer,
• wherein the combining comprises:
• heating the first part and the second part to at least a glass transition temperature of the a-Se photoconductive layer;
• and
• applying pressure to fuse the first portion of the a-Se photoconductive layer and the second portion of the a-Se photoconductive layer thereby combining the first part and the second part,
• wherein the readout device has common electrode.

A method of manufacturing a photomultiplier comprising:

• depositing an electron blocking layer comprising a p-type material on a readout device where the readout device has a common electrode;
• thermally depositing a-Se layer on the electron blocking layer;
• depositing at a temperature less than a glass transition temperature of the a-Se layer, a hole blocking layer comprising a n-type material having a dielectric constant of at least 50;
• and
• depositing another electrode on the hole blocking layer.