Method for manufacturing tft substrate and tft substrate thereof

A method for manufacturing thin-film transistor (TFT) substrate, comprising:

• step B1:
• forming a photoresist layer on a semi-finished substrate, wherein the semi-finished substrate comprises a first metal layer, an insulating layer disposed on the first metal layer, and a semiconductor layer disposed on the insulating layer, the photoresist layer is disposed on the semiconductor layer, and the semi-finished substrate has a first region, a second region, and a third region;
• step B2:
• patterning the photoresist layer to expose the semiconductor layer in the third region and form a first etching barrier layer disposed corresponding to the first region and a second etching barrier layer disposed corresponding to the second region, wherein the thickness of the first etching barrier layer is less than the thickness of the second etching barrier layer;
• step B3:
• etching the semiconductor layer in the third region under the shielding of the first etching barrier layer and the second etching barrier layer;
• step B4:
• peeling off the first etching barrier layer to expose the semiconductor layer in the first region;
• Step B5:
• etching the semiconductor layer and the insulating layer under the shielding of the second etching barrier layer to remove the semiconductor layer disposed corresponding to the first region, such that the thickness of the insulating layer in the third region less than the thickness of the insulating layer in the first region.