Semiconductor device
AssigneeVanguard International Semiconductor Corporation
InventorsJian-Hsing Lee, Yeh-Jen Huang, Li-Yang Hong, Yu-Hao Ho
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Abstract
A semiconductor device includes a gate electrode disposed on a substrate. A source region and a drain region are disposed in the substrate and located on two sides of the gate electrode respectively. The drain region includes a plurality of drain segments that are laterally separated from each other. These drain segments have a first conductive type and the substrate has a second conductive type. A plurality of drain contacts is electrically connected to the drain segments. Each drain segment corresponds to at least one of these drain contacts. A drain electrode is electrically connected to these drain contacts. A source electrode is electrically connected to the source region.
Claims20
A semiconductor device, comprising:
- a gate electrode, disposed on a substrate;
- a source region and a drain region, disposed in the substrate and located on two sides of the gate electrode respectively, wherein the drain region comprises a plurality of drain segments that are laterally separated from each other, the plurality of drain segments have a first conductivity type and the substrate has a second conductivity type;
- a plurality of drain contacts, disposed on the drain region, wherein each of the plurality of drain segments corresponds to at least one of the plurality of drain contacts;
- a drain electrode, electrically connected to the plurality of drain contacts;
- and
- a source electrode, electrically connected to the source region.
Dependencies are inferred from the claim text.