Semiconductor device

A semiconductor device, comprising:

• a lower bonding structure that includes a lower substrate, a lower dielectric structure on the lower substrate, a first transistor between the lower substrate and the lower dielectric structure, and a first lower bonding pad in the lower dielectric structure;
• and
• an upper bonding structure that includes an upper dielectric structure on the lower dielectric structure, an upper substrate on the upper dielectric structure, a memory cell structure between the upper substrate and the upper dielectric structure, and a first upper bonding pad in the upper dielectric structure,
• wherein the first lower bonding pad is in contact with the first upper bonding pad,
• wherein the first transistor overlaps the memory cell structure, and
• wherein the first transistor is electrically connected to the memory cell structure through the first upper bonding pad and the first lower bonding pad.

A semiconductor device, comprising:

• a lower substrate;
• a lower dielectric structure on the lower substrate;
• a transistor between the lower substrate and the lower dielectric structure;
• an upper dielectric structure on the lower dielectric structure;
• an upper substrate on the upper dielectric structure;
• a memory cell structure between the upper substrate and the upper dielectric structure, the memory cell structure including a bit line;
• a connection dielectric structure on the upper substrate;
• a connection conductive structure in the connection dielectric structure;
• a first lower bonding pad and a first upper bonding pad that electrically connect the transistor to the bit line, the first lower bonding pad and the first upper bonding pad being in contact with each other;
• a second lower bonding pad and a second upper bonding pad that electrically connect the transistor to the connection conductive structure, the second lower bonding pad and the second upper bonding pad being in contact with each other;
• and
• a through via that electrically connects the second upper bonding pad to the connection conductive structure, the through via penetrating the upper substrate.