Semiconductor pattern and method of rounding the same
AssigneeUnited Microelectronics Corp.
InventorsBo-Wei Huang, Po-Hung Chen, Chun-Cheng Yu, I-Hsien Liu, Ho-Yu Lai, Kuan-Wen Fang, Chih-Sheng Chang
Life of this patent
Estimating the term…
Abstract
A semiconductor pattern is provided in the present invention, including a first line extending to one end in a first direction and a second line extending in a second direction perpendicular to the first direction and adjacent to the end of the first line in the first direction, wherein the end of the first line is provided with a rounding feature, the first line has a width in the second direction, and the width is gradually increased to a maximum width toward the end and gradually converged to form the rounding feature.
Claims16
A semiconductor pattern, comprising:
- a first line extending to one end in a first direction;
- and
- a second line extending in a second direction perpendicular to said first direction and adjacent to said end of said first line;
- wherein said end of said first line is provided with a rounding feature, said first line has a width in said second direction, and said width gradually increases to a maximum width toward said end and then gradually decreases and converges to form said rounding feature at said end.
A method of rounding semiconductor pattern, comprising:
- providing a semiconductor pattern having a first line and a second line, wherein said first line extends in a first direction to one end, and said second line extends in a second direction perpendicular to said first direction and adjacent to said end of said first line in said first direction;
- and
- using optical proximity correction (OPC) tool to perform a rounding action to said end of said first line, so as to form a rounding feature at said end, wherein said first line has a width in said second direction, and said width gradually increases to a maximum width toward said end and then gradually decreases and converges to form said rounding feature.
Dependencies are inferred from the claim text.