Conductive structure in semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a first aluminum-containing layer, a first etch stop layer, and a first carbon-containing dielectric layer sequentially stacked in a first direction over a substrate;
• a first metal line formed through an upper portion of the first carbon-containing dielectric layer and longitudinally oriented in a second direction that is different from the first direction;
• a first conductive via formed through a lower portion of the carbon-containing dielectric layer, the first etch stop layer, and the first aluminum-containing layer;
• and
• a first barrier layer covering a slope sidewall of the carbon-containing dielectric layer in a cross-sectional view along a third direction that is different from the first direction and the second direction.

A method for manufacturing a semiconductor structure, comprising:

• forming an aluminum-containing layer;
• forming an etch stop layer over the aluminum-containing layer;
• forming a carbon-containing dielectric layer over the etch stop layer;
• forming a via opening and a line trench in the carbon-containing dielectric layer, wherein the via opening passes through the etch stop layer and exposes a top surface of the aluminum-containing layer;
• etching through the aluminum-containing layer so that the via opening extends through the aluminum-containing layer;
• and
• forming a conductive structure in the via opening and the line trench.