Interposer with built-in wiring for testing an embedded integrated passive device and methods for forming the same

A method of forming a semiconductor structure comprising:

• forming an interposer, wherein the interposer comprises
• an integrated passive device;
• a die-side redistribution structure;
• first on-interposer bump structures;
• and
• second on-interposer bump structures,
• wherein the die-side redistribution structure comprises first die-side redistribution wiring interconnects electrically connecting electrical nodes within the integrated passive device to the first on-interposer bump structures, and further comprises second die-side redistribution wiring interconnects each providing a respective electrical connection between a respective pair of second on-interposer bump structures within the second on-interposer bump structures;
• and
• bonding a first semiconductor die to the interposer, wherein the first semiconductor die comprises:
• first on-die bump structures that are bonded to the first on-interposer bump structures through first solder material portions;
• and
• second on-die bump structures that are bonded to the second on-interposer bump structures through second solder material portions,
• wherein the first semiconductor die comprises first metal interconnect structures embedded within dielectric material layers and providing electrical connections between a respective one of the first on-interposer bump structures and a respective one of the second on-interposer bump structures through a respective one of the first solder material portions and through a respective one of the second solder material portions.

A method of forming a semiconductor structure comprising:

• forming a substrate-side redistribution structure and a die-side redistribution structure on an integrated passive device, whereby an interposer is formed, wherein the substrate-side redistribution structure is formed on a first side of the integrated passive device, and the die-side redistribution structure is formed on a second side of the integrated passive device, wherein the die-side redistribution structure comprises:
• first on-interposer bump structures;
• second on-interposer bump structures;
• first die-side redistribution wiring interconnects electrically connecting electrical nodes within the integrated passive device to the first on-interposer bump structures;
• and
• second die-side redistribution wiring interconnects each providing a respective electrical connection between a respective pair selected from second on-interposer bump structures, whereby an interposer is formed;
• and
• bonding a first semiconductor die to the interposer, wherein the first semiconductor die comprises:
• first on-die bump structures that are bonded to the first on-interposer bump structures through first solder material portions;
• and
• second on-die bump structures that are bonded to the second on-interposer bump structures through second solder material portions.