Direct cooling device for integrated circuit and manufacturing method thereof

A method of manufacturing a direct cooling device for an integrated circuit, the method comprising:

• a device and substrate preparation step of stacking a material layer for forming a semiconductor device on one surface of a substrate made of a material including silicon, performing a semiconductor process on the material layer, forming the semiconductor device, and forming a through via hole penetrating the one side and the other side located opposite to the one side so that a source terminal of the semiconductor device is exposable to the other side;
• a heat sink unit preparation step of disposing a heat sink unit including a flow path forming portion in which a fluid movement region communicating with the through via hole of the substrate is formed on a lower side of the substrate;
• a wiring step of disposing a packaging block in the heat sink unit in a form that surrounds the substrate for packaging the semiconductor device, and electrically connecting an electrode placed on the packaging block to a gate terminal and a drain terminal of the semiconductor device;
• a metal thin film layer forming step of forming a metal thin film layer between the substrate and the heat sink unit for electrical connection and physical coupling between the substrate and the heat sink unit, forming a bonding portion of the metal thin film layer between the substrate and the heat sink unit, and forming, in the through via hole, a direct cooling portion integrally formed the bonding portion and in which a flow channel communicating with the fluid movement region of the heat sink unit is formed;
• and
• a coupling step of coupling the substrate to the heat sink unit by coating a side of the heat sink unit opposite to the substrate with metal and then applying heat.