Semiconductor device and method of manufacturing a semiconductor device

An electronic apparatus, comprising:

• a first electronic device comprising a first electronic device bottom side, a first electronic device top side comprising first electronic device terminals, and a first electronic device sidewall between the first electronic device top side and the first electronic device bottom side;
• a first dielectric structure comprising:
• a dielectric structure top portion over the first electronic device top side;
• a dielectric structure sidewall portion over the first electronic device sidewall and extending from the dielectric structure top portion;
• and
• a dielectric structure bottom portion extending from the dielectric structure sidewall portion, wherein the dielectric structure bottom portion extends away from the first electronic device sidewall;
• a first conductive structure comprising:
• a first conductive structure top portion over the dielectric structure top portion and coupled to at least one of the first electronic device terminals;
• a first conductive structure sidewall portion over the dielectric structure sidewall portion and extending from the first conductive structure top portion;
• and
• a first conductive structure bottom portion over the dielectric structure bottom portion and extending from the first conductive structure sidewall portion, wherein the first conductive structure bottom portion extends away from the first electronic device sidewall;
• a second conductive structure over the first electronic device;
• a second dielectric structure over the second conductive structure;
• and
• a first interconnect structure coupled to the first conductive structure top portion and the second conductive structure.

An electronic apparatus, comprising:

• a first electronic device comprising a first electronic device top side, a first electronic device bottom side, and a first electronic device sidewall between the first electronic device top side and the first electronic device bottom side;
• a first dielectric layer over the first electronic device, wherein the first dielectric layer comprises a first dielectric layer top side that is conformal to the first electronic device top side, the first electronic device sidewall, and a bottom side of the electronic apparatus;
• a first conductive layer over the first dielectric layer, wherein the first conductive layer comprises a first conductive trace that is conformal to the first dielectric layer top side;
• a second electronic device comprising a second electronic device bottom side over the first electronic device top side;
• and
• a first interconnect structure between the first electronic device top side and the second electronic device bottom side, wherein the first interconnect structure couples the second electronic device to the first conductive trace.

A method of providing an electronic apparatus, the method comprising:

• providing a first electronic device comprising a first electronic device top side, a first electronic device bottom side, and a first electronic device sidewall between the first electronic device top side and the first electronic device bottom side;
• providing a first dielectric layer over the first electronic device such that a first dielectric layer top side is conformal to the first electronic device top side, the first electronic device sidewall, and a bottom side of the electronic apparatus;
• providing a first conductive layer over the first dielectric layer such that the first conductive layer comprises a first conductive trace that is conformal to the first dielectric layer top side;
• providing a second electronic device such that a second electronic device bottom side is over the first electronic device top side;
• and
• providing a first interconnect structure between the first electronic device top side and the second electronic device bottom side such that the first interconnect structure couples the second electronic device to the first conductive trace.