Cleaning Wide Bandgap Epitaxial Susceptors and Method Therefor

A susceptor configured to hold one or more WBG (Wide Bandgap) semiconductor wafers for epitaxial layer growth to support a manufacture of at least one WBG (Wide Bandgap) semiconductor device wherein the susceptor is cleaned by a method comprising:

• scanning a laser over a surface of the susceptor wherein the susceptor has one or more layers of polycrystalline WBG semiconductor material formed thereon from being used in an epitaxial reactor wherein energy of the laser is configured to be absorbed by the one or more layers of polycrystalline WBG semiconductor material to decompose the one or more layers of polycrystalline WBG semiconductor material into two or more constituent components;
• and
• etching the two or more constituent components from the susceptor to remove the two or more constituent components from the susceptor.

A susceptor configured to hold one or more WBG (Wide Bandgap) semiconductor wafers for epitaxial layer growth to support a manufacture of at least one WBG (Wide Bandgap) semiconductor device comprising:

• a susceptor wherein the susceptor has a protective layer comprising tantalum carbide (TaC);
• one or more layers of polycrystalline silicon carbide material overlying portions of the susceptor;
• a laser configured to scan the one or more layers of polycrystalline silicon carbide material wherein energy from the laser is configured to decompose the one or more layers of polycrystalline silicon carbide material into silicon and carbon, wherein the carbon is removed from the susceptor, wherein the silicon is removed from the susceptor, wherein a cleaned susceptor comprises removing the one or more layers of polycrystalline silicon carbide material from the susceptor, wherein the cleaned susceptor is used for epitaxial growth on one or more WBG semiconductor wafers, and wherein one or more devices are formed on the one or more WBG semiconductor wafers having the epitaxial growth from the cleaned susceptor.