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AssigneeBeijing Naura Microelectronics Equipment Co., Ltd.
InventorsQiushi XIE, Xiaoping SHI, Qingjun ZHOU, Dongsan LI, Chun WANG, Yiming ZHANG
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The present disclosure discloses a pattern sheet, a semiconductor intermediate product, and a hole etching method. The pattern sheet includes a substrate, a dielectric layer, and a mask structure. The mask structure includes a multi-layer mask layer. An uppermost mask layer is a photoresist layer. A thickness of each layer of the mask layer and etching selectivity ratios between the layers below the mask layer satisfy that in each two neighboring layers of the mask layer, a lower layer of the mask layer is etched to form a through-hole penetrating a thickness of the lower layer of the mask layer, a remaining thickness of the upper layer of the mask layer is greater than or equal to zero.
1-18. (canceled)
A pattern sheet, comprising a first mask layer, a second mask layer, a dielectric layer, and a substrate sequentially arranged in stacks from top to bottom, wherein:
A pattern sheet comprising a first mask layer, a second mask layer, a third mask layer, a dielectric layer, and a substrate sequentially arranged in stacks from top to bottom, wherein:
Dependencies are inferred from the claim text.