Power semiconductor device manufacturing method

Abstract

Provided is a method for manufacturing a power semiconductor device, which includes forming an active layer on an SiC substrate. The forming of the active layer includes injecting a source gas onto the SiC substrate, performing primary purging of injecting a purge gas after stopping the injecting of the source gas, injecting a reactant gas after stopping the primary purging, and performing secondary purging of injecting the purging gas after stopping the injecting of the reactant gas. Thus, in accordance with exemplary embodiments, the active layer may be formed at a low temperature. Therefore, a substrate or a thin film formed on the substrate may be prevented from being damaged by high-temperature heat. In addition, power or a time required for heating the substrate to form the active layer may be saved, and an overall process time may be shortened.

Dependencies are inferred from the claim text.