Semiconductor manufacturing device

A semicondctor manufacturing device comprising:

• a first plate including first plasma openings penetrating the first plate, first gas flow paths injecting a first process gas into a first zone, and second gas flow paths inject a second process gas into a second zone that surrounds the first zone;
• a second plate including second plasma openings penetrating the second plate and are connected to the first plasma openings, first holes passing the first process gas therethrough, second holes passing the second process gas therethrough, a first cavity diffusing the first process gas injected through the first holes, and a second cavity diffusing the second process gas injected through the second holes;
• and
• a third plate including third plasma openings connected to the first plasma openings and the second plasma openings, first gas spraying holes passing the first process gas from the first cavity therethrough and spraying the first process gas to an outside of the showerhead, and second gas spraying holes passing the second process gas from the second cavity therethrough and spraying the second process gas to the outside of the showerhead,
• wherein:
• the first and second plates are bonded together, wherein a bottom surface of the first plate and an upper surface of the second plate face each other;
• and
• the second and third plates are bonded together, wherein a bottom surface of the second plate and an upper surface of the third plate face each other.

A semicondctor manufacturing device comprising:

• a first plate including first plasma openings penetrating the first plate;
• and
• a second plate including second plasma openings penetrating the second plate, the second plasma openings are connected to the first plasma openings, the second plate further includes first gas flow paths injecting a first process gas into a first zone, second gas flow paths injecting a second process gas into a second zone that surrounds the first zone, a first cavity disposed in the first zone, wherein the first process gas is injected into the first cavity through the first gas flow paths, a second cavity disposed in the second zone, wherein the second process gas is injected into the second cavity through the second gas flow paths, first gas spraying holes spraying the first process gas from the first cavity to an outside of the showerhead, and second gas spraying holes spraying the second process gas from the second cavity to the outside of the showerhead,
• wherein the showerhead includes the first and second plates bonded together, wherein a bottom surface of the first plate and an upper surface of the second plate face each other.