Plasma processing improvement

A process chamber suitable for use in semiconductor manufacturing, comprising:

• a chamber body disposed around a process volume;
• a substrate support in the process volume;
• a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume, the plasma-generating volume bounded by one or more interior side walls;
• and
• a first deflector positioned at least partially in the plasma-generating volume, the first deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, and one or more inner side surfaces connecting the top with the bottom, wherein the one or more outer side surfaces of the annular body are spaced apart from the one or more interior side walls of the plasma-generating volume.

A process chamber, suitable for use in semiconductor manufacturing, comprising:

• a chamber body disposed around a process volume;
• a substrate support in the process volume;
• a plasma source disposed over the substrate support, the plasma source having a top and one or more sides disposed around a plasma-generating volume;
• and
• a deflector positioned between the substrate support and the top of the plasma source, the deflector comprising an annular body having a top, a bottom, one or more outer side surfaces connecting the top with the bottom, one or more inner side surfaces connecting the top with the bottom, and a plurality of holes extending through the annular body.