Read voltage adjustment method, memory storage device and memory control circuit unit

A memory storage device, comprising:

• a connection interface unit configured to be coupled to a host system;
• a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of memory cells;
• and
• a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module,
• wherein the memory control circuit unit is configured to:
• send a write command sequence, wherein the write command sequence instructs to program a plurality of first memory cells in the plurality of memory cells;
• send a first read command sequence, wherein the first read command sequence instructs to read the programmed plurality of first memory cells using a first read voltage level to obtain first count information;
• obtain first compensation information corresponding to the first read voltage level, and the first compensation information reflects a deviation in evenly programming the plurality of first memory cells to a plurality of states;
• and
• adjust the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

A memory control circuit unit, configured to control a rewritable non-volatile memory module, the memory control circuit unit comprising:

• a host interface configured to be coupled to a host system;
• a memory interface configured to be coupled to a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of memory cells;
• and
• a memory management circuit coupled to the host interface and the memory interface,
• wherein the memory management circuit is configured to:
• send a write command sequence, wherein the write command sequence instructs to program a plurality of first memory cells in the plurality of memory cells;
• send a first read command sequence, wherein the first read command sequence instructs to read the programmed plurality of first memory cells using a first read voltage level to obtain first count information;
• obtain first compensation information corresponding to the first read voltage level, and the first compensation information reflects a deviation in evenly programming the plurality of first memory cells to a plurality of states;
• and
• adjust the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.