Epitaxial wafer for ultraviolet ray emission device and method for manufacturing the same

An epitaxial wafer for an ultraviolet ray emission device, comprising:

• a first supporting substrate being transparent for ultraviolet ray and having heat resistance;
• a seed crystal layer of an AlxGa1-xN (0.5<x≤1) single crystal bonded on the first supporting substrate by laminating;
• and
• an epitaxial layer on the seed crystal layer, the epitaxial layer having:
• a first conductive clad layer containing AlyGa1-yN (0.5<y≤1) as a main component;
• an AlGaN-based active layer;
• and a second conductive clad layer containing AlzGa1-zN (0.5<z≤1) as a main component that are stacked and grown in this order.

A method for manufacturing an epitaxial wafer for an ultraviolet ray emission device, the method comprising steps of:

• producing a laminated substrate by laminating a seed crystal layer on a first supporting substrate being transparent for ultraviolet ray and having heat resistance, the seed crystal layer being peel-transferred from an AlxGa1-xN (0.5<x≤1) single crystal;
• and
• forming an epitaxial layer on the laminated substrate, the epitaxial layer having:
• a first conductive clad layer containing AlyGa1-yN (0.5<y≤1) as a main component;
• an AlGaN-based active layer;
• and a second conductive clad layer containing AlzGa1-zN (0.5<z≤1) as a main component that are epitaxially grown in this order.