Infrared led element

An infrared LED element having a peak emission wavelength of 1000 nm or more, the infrared LED element comprising:

• a first LED laminate including a first cladding layer of a first conductivity type being p-type or n-type, a first light-emitting layer disposed directly or indirectly on top of the first cladding layer, and a second cladding layer of a second conductivity type different from the first conductivity type, the second cladding layer being disposed directly or indirectly on top of the first light-emitting layer;
• a laminate for tunnel junction disposed directly or indirectly on top of the first LED laminate;
• and
• a second LED laminate including a third cladding layer of the first conductivity type disposed directly or indirectly on top of the laminate for tunnel junction, a second light-emitting layer directly or indirectly disposed on top of the third cladding layer, and a fourth cladding layer of the second conductivity type disposed directly or indirectly on top of the second light-emitting layer,
• wherein the laminate for tunnel junction includes:
• a first tunnel layer disposed directly or indirectly on top of the second cladding layer and containing a dopant of the second conductivity type at a higher concentration than the second cladding layer;
• and
• a second tunnel layer disposed directly or indirectly on top of the first tunnel layer and below the third cladding layer, containing a dopant of the first conductivity type at a higher concentration than the third cladding layer, and forming a tunnel junction with the first tunnel layer, and
• the first light-emitting layer, the second light-emitting layer, the first tunnel layer, and the second tunnel layer are made of a material that can be lattice-matched to an InP single crystal.