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US 2024/0258452 A1Published application
Systems and Methods for Epitaxy-Free Thin-Film Solar Cells
AssigneeCalifornia Institute of Technology
InventorsPhillip R. Jahelka, Andrew W. Nyholm, Harry A. Atwater
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Abstract
Systems and methods for epitaxy-free thin-film solar cells are described. The thin-film solar cells can be fabricated with low cost epitaxy-free processes. The solar cells have high efficiency and are lightweight. These properties make the solar cells desired for space based solar cell applications.
Claims22
A method for fabricating a semiconductor device comprising:
- forming a semiconductor layer on a semiconductor substrate via a diffusion doping process, wherein the semiconductor layer and the semiconductor substrate forms a p-n junction;
- depositing a stress film on the semiconductor layer;
- exfoliating a thin film by applying a pulling force to the stress film, wherein the thin film comprises the semiconductor layer and at least a portion of the semiconductor substrate;
- depositing at least one electrode on the thin film to form an ohmic contact;
- and
- etching a portion of the exfoliated thin film while preserving the stress film and the at least one electrode to form a semiconductor device.
3 more elements
A solar cell comprising:
- an n-gallium arsenide (GaAs) substrate with a (110) orientation;
- a p-GaAs layer forming a junction with the n-GaAs substrate, wherein a thickness of the n-GaAs substrate and the p-GaAs layer is less than or equal to 5 μm;
- a plurality of electrodes deposited on the n-GaAs substrate, wherein each of the plurality of electrodes comprises a plurality of metal layers;
- and
- at least one electrode deposited on the p-GaAs layer.
2 more elements
A solar cell comprising:
- an n-gallium arsenide (GaAs) substrate with a (110) orientation;
- a p-GaAs layer forming a junction with the n-GaAs substrate, wherein a thickness of the n-GaAs substrate and the p-GaAs layer is less than or equal to 5 μm;
- a first set of electrodes deposited on the n-GaAs substrate, wherein each of the first set of electrodes comprises a plurality of metal layers;
- and
- a second electrode deposited on the p-GaAs layer.
2 more elements
Dependencies are inferred from the claim text.