Stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell

A stacked, monolithic, upright metamorphic, terrestrial concentrator solar cell comprising:

• exactly five subcells;
• and
• a metamorphic buffer,
• wherein a first subcell has a first lattice constant and a first band gap and consists essentially of germanium,
• wherein a second subcell is arranged above the first subcell and has a first second lattice constant and a second band gap, and comprises GaInAs or consists essentially of GaInAs,
• wherein a third subcell is arranged above the second subcell and has the second second lattice constant and a third band gap, and comprises AlGaInAs or consists essentially of AlGaInAs,
• wherein a fourth subcell is arranged above the third subcell and has the third second lattice constant and a fourth band gap, and comprises InP,
• wherein a fifth subcell is arranged above the fourth subcell and has the fourth second lattice constant and a fifth band gap, and comprises InP,
• wherein the first band gap is less than the second band gap which is less than the third band gap which is less than the fourth band gap which is less than fifth band gap,
• wherein the first lattice constant is less than the first, second, third, and fourth second lattice constants,
• wherein the metamorphic buffer is arranged between the first subcell and the second subcell and has the first lattice constant on a bottom side facing the first subcell and has the first second lattice constant on a top side facing the second subcell,
• wherein all semiconductor layers of the concentrator solar cell arranged above the first subcell are epitaxially produced on a preceding subcell,
• wherein the fifth subcell comprises a base layer and an emitter layer, and consists essentially of AlInGaP, with an aluminum content less than 25% and an indium content greater than 63%, based on group III elements,
• wherein the first, second, third, and fourth second lattice constants differ from one another by less than 0.2%,
• wherein any of the first, second, third, and fourth second lattice constants is greater than 5.72·10−10 m, and
• wherein the fifth subcell has a band gap less than 1.98 eV and greater than 1.74 eV.