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US 2024/0258406 A1Published application
Semiconductor transistor structure
AssigneeUnited Semiconductor (Xiamen) Co., Ltd.
InventorsSheng-Hsu Liu, Shih-Hsien Huang, Wen Yi Tan
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Abstract
A semiconductor transistor structure includes a substrate with a first conductivity type, a fin structure grown on the substrate, and a gate on the fin structure. The fin structure includes a first epitaxial layer having a second conductivity type opposite to the first conductivity type, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer having the second conductivity type on the second epitaxial layer.
Claims10
A semiconductor transistor structure, comprising:
- a substrate with a first conductivity type;
- a fin structure grown on the substrate, the fin structure comprising a first epitaxial layer having a second conductivity type opposite to the first conductivity type, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer having the second conductivity type on the second epitaxial layer;
- and
- a gate on the fin structure.
1 more element
Dependencies are inferred from the claim text.