Semiconductor device and manufacture method
AssigneeNanya Technology Corporation
InventorFeng Wen HSU
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a patterned substrate, a first barrier layer, a second barrier layer and a conductive layer. The patterned substrate has a trench and a sidewall surrounding the trench. The first barrier layer disposed on a first portion of the sidewall. The second barrier layer with a permittivity from 0.5 to 3.8 is disposed on the first barrier layer and a second portion of the sidewall, in which the second portion of the sidewall is higher than the first portion of the sidewall and neighboring to a top surface of the patterned substrate. A conductive layer fills the trench. A method of manufacturing a semiconductor device is further provided.
Claims20
A semiconductor device comprising:
- a patterned substrate having a trench and a sidewall surrounding the trench;
- a first barrier layer disposed on a first portion of the sidewall;
- a second barrier layer with a permittivity from 0.5 to 3.8 disposed on the first barrier layer and a second portion of the sidewall, wherein the second portion of the sidewall is higher than the first portion of the sidewall and neighboring to a top surface of the patterned substrate;
- and
- a conductive layer filling the trench.
A method of manufacturing a semiconductor device comprising:
- providing a patterned substrate having a trench and a sidewall surrounding the trench;
- disposing a first barrier material on a first portion of the sidewall to form a first barrier layer;
- filling a portion of the trench with a first conductive material to form a conductive portion, wherein a top surface of the conductive portion is lower than a top surface of the first barrier layer;
- disposing a second barrier material with a permittivity from 0.5 to 3.8 on the first barrier layer and a second portion of the sidewall to form a second barrier layer, wherein the second portion of the sidewall is higher than the first portion of the sidewall and neighboring to a top surface of the patterned substrate;
- and
- filling the trench with a second conductive material to form a conductive layer including the conductive portion.
Dependencies are inferred from the claim text.