Semiconductor device

A semiconductor device comprising:

• a substrate having a first region, a second region, and a dummy region arranged between the first region and the second region and divided into a plurality of zones;
• a plurality of first gate structures disposed in the first region, spaced apart from each other in a first horizontal direction, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a first width;
• a plurality of second gate structures disposed in the second region, spaced apart from each other in the first horizontal direction, extending in the second horizontal direction, and having a second width greater than the first width;
• a plurality of single diffusion breaks arranged between the plurality of first gate structures and extending in the second horizontal direction;
• and
• a plurality of dummy diffusion breaks arranged in the dummy region, extending in the second horizontal direction, and having different lengths in the second horizontal direction in the plurality of zones.

A semiconductor device comprising:

• a substrate having a first region, a second region, and a dummy region arranged between the first region and the second region;
• a plurality of first active patterns disposed in the first region and extending in a first horizontal direction;
• a plurality of first gate structures disposed in the first region, extending in a second horizontal direction perpendicular to the first horizontal direction, and having a first width, wherein the plurality of first gate structures crosses the first active patterns in the first region;
• a plurality of second active patterns disposed in the second region and extending in the first horizontal direction;
• a plurality of second gate structures disposed in the second region, extending in the second horizontal direction, and having a second width greater than the first width, wherein the plurality of second gate structures crosses the second active patterns in the second region;
• a plurality of first recesses arranged between the plurality of first gate structures and spaced apart from each other in the first horizontal direction;
• a plurality of single diffusion breaks arranged in the plurality of first recesses and extending in the second horizontal direction;
• a plurality of dummy diffusion breaks arranged in the dummy region, extending in the second horizontal direction, and including a same material as the single diffusion breaks;
• and
• an interlayer insulating layer surrounding each of the first gate structures, the second gate structures, the single diffusion breaks, and the dummy diffusion breaks.