Semiconductor structure including 3d capacitor and method for forming the same

A method for forming a semiconductor structure, comprising:

• forming a plurality of first fins and a plurality of second fins over a substrate, wherein the first fins have first widths, the second fins have second widths, and the first widths are greater than the second widths;
• forming a first isolation structure between the first fins and a second isolation structure between the second fins, wherein a width of the first isolation structure is less than a width of the second isolation structure;
• performing an ion implantation on the first fins;
• and
• recessing the first isolation structure and the second isolation structure to expose a portion of each first fin and a portion of each second fin, wherein the first fins have third widths equal to or less than the first widths.

A semiconductor structure including a 3D capacitor comprising:

• a substrate having a first region and a second region;
• a 3D capacitor in the first region, wherein the 3D capacitor comprises at least a first fin;
• a first isolation structure in the first region and adjacent to the first fin;
• a FinFET device in the second region, wherein the FinFET device comprises at least a second fin;
• and
• a second isolation structure in the second region and adjacent to the second fin,
• wherein a width of the second isolation structure is greater than a width of the first isolation structure.