Semiconductor device structure with conductive contacts of different widths and method for preparing the same

Abstract

The present disclosure provides a semiconductor device structure with conductive contact of different widths and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate, and a first conductive contact penetrating through the dielectric layer. The first conductive contact includes a first metal filling layer and a first metal silicide structure surrounding the first metal filling layer. The semiconductor device structure also includes a second conductive contact penetrating through the dielectric layer. The second conductive contact includes a second metal filling layer and a second metal silicide structure surrounding the second metal filling layer, and a first width of the first conductive contact is different from a second width of the second conductive contact.

Dependencies are inferred from the claim text.