Bonded body comprising mosaic diamond wafer and semiconductor of different type, method for producing same, and mosaic diamond wafer for use in bonded body with semiconductor of different type

A method for producing a bonded body comprising a mosaic diamond wafer having a coalescence boundary between a plurality of single-crystal diamond substrates and a semiconductor of a different type, the method comprising:

• a step of selecting a mosaic diamond wafer which has a coalescence boundary between a plurality of single-crystal diamond substrates and in which a maximum level difference on a bonding surface of the mosaic diamond wafer with the semiconductor of a different type is 10 nm or less.

A method for producing a bonded body comprising a mosaic diamond wafer and a semiconductor of a different type, the method comprising:

• a step of preparing a mosaic diamond wafer having a coalescence boundary between a plurality of single-crystal diamond substrates;
• and
• a step of polishing a surface of the mosaic diamond wafer until a maximum level difference in the coalescence boundary becomes 10 nm or less.

(canceled)