Semiconductor manufacturing method and semiconductor manufacturing apparatus

Abstract

A semiconductor manufacturing method or apparatus for manufacturing a semiconductor device including a first process in which, for a semiconductor wafer having a film to be processed containing a typical metal element disposed on a surface thereof, an organometallic complex is formed on a surface of the film by increasing a temperature of the wafer after supplying an organic gas having a Lewis basic partial molecular structure into the processing chamber and adsorbing the gas onto the film, and the organometallic complex is vaporized and desorbed, and then a second process in which the organometallic complex formed on the surface of the film is vaporized and desorbed by stopping the supply of the gas and then increasing the temperature of the wafer stepwise after adsorbing the gas onto the surface of the film at a low temperature while supplying the organic gas containing the organic compound.

Dependencies are inferred from the claim text.