SUBSTRATE PROCESSING FOR AlN AND GaN POLARITY CONTROL
AssigneeApplied Materials, Inc.
InventorMichel Khoury
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Abstract
The present technology includes semiconductor structures. Structures include a silicon-containing substrate, a layer of metal nitride overlying the silicon-containing substrate, a structure overlying the layer of the metal nitride, and an oxygen rich layer disposed between the layer of the metal nitride and the structure. The structure is formed from a material that includes a gallium-containing material, and aluminum nitride material, or a combination thereof, where at least about 90 wt. % of the material exhibits a metal-polarity.
Claims20
A semiconductor structure comprising:
- a silicon-containing substrate;
- a layer of a metal nitride overlying the silicon-containing substrate;
- an oxygen rich layer formed on the layer of the metal nitride, wherein the oxygen rich layer is an inversion domain generally aligned with a surface of the layer of the metal nitride;
- and
- a structure overlying the oxygen rich layer, the structure being formed from a material comprising a gallium-containing material, an aluminum nitride material, or a combination thereof, wherein at least about 90 wt. % of the material exhibits a metal-polarity.
A semiconductor structure comprising:
- a silicon substrate;
- a layer of aluminum nitride, hafnium nitride, niobium nitride, titanium nitride, scandium nitride, gallium nitride, or a combination thereof, formed by physical vapor deposition, overlying the silicon substrate;
- an oxygen rich layer formed on the layer of aluminum nitride, hafnium nitride, niobium nitride or a combination thereof, the oxygen rich layer containing at least two of oxygen, nitrogen, aluminum, and gallium
- a structure overlying the oxygen rich layer, the structure being formed from a material comprising a gallium-containing material, an aluminum nitride material, or a combination thereof, wherein at least about 90 wt. % of the material exhibits a metal-polarity.
A method of semiconductor processing comprising:
- forming a seed layer of a metal nitride material on a silicon substrate;
- exposing the seed layer to an oxygen rich environment having at least 23.5 vol. % oxygen based upon a volume of the environment;
- forming a polarity inversion domain over the seed layer;
- and
- forming a gallium-containing material, an aluminum containing material, or a combination thereof on the inversion domain, wherein at least about 90 wt. % of the material exhibits a metal-polarity.
Dependencies are inferred from the claim text.