US 2024/0255852 A1 · METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND COMPOSITION

Abstract

A method for manufacturing a semiconductor substrate, includes applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film. A composition for forming a resist film is applied to the resist underlayer film to form a resist film. The resist film is exposed to radiation. The exposed resist film is developed. The composition for forming a resist underlayer film includes: a polymer having a sulfonic acid ester structure; and a solvent.

Claims20

Dependent claims

A method for manufacturing a semiconductor substrate, the method comprising:

applying a composition for forming a resist underlayer film directly or indirectly to a substrate to form a resist underlayer film;
applying a composition for forming a resist film to the resist underlayer film to form a resist film;
exposing the resist film to radiation;
and
developing the exposed resist film,
wherein the composition for forming a resist underlayer film comprises:
a polymer having a sulfonic acid ester structure;
and
a solvent.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/435,001Filed 7 Feb 2024

Priority

JP 2021-13063210 Aug 2021

Published

1 Aug 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification19 codes

G03F 7/11
Characterised by structural details, e.g. supports, auxiliary layers: having cover layers or intermediate layers, e.g. subbing layers
C08F 12/08
Hydrocarbons: styrene
C08F 12/20
Halogens: fluorine
C08F 12/22
Substituted by hetero atoms or groups containing heteroatoms: oxygen

Method for manufacturing semiconductor substrate and composition

Life of this patent

Method for manufacturing semiconductor substrate and composition

Life of this patent

Abstract

Claims20