Silicon carbide substrate

Abstract

A silicon carbide substrate includes a dopant. The silicon carbide substrate has, on an off-downstream side with respect to a center of the silicon carbide substrate in plan view, a portion having a resistivity lower than a resistivity at the center of the silicon carbide substrate in plan view. A value obtained by dividing a difference between the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view and a minimum resistivity of the silicon carbide substrate on the off-downstream side with respect to the center of the silicon carbide substrate in plan view by the resistivity of the silicon carbide substrate at the center of the silicon carbide substrate in plan view is 0.015 or less. The resistivity of the silicon carbide substrate increases from a position at which the silicon carbide substrate has the minimum resistivity toward the off-downstream side.

Dependencies are inferred from the claim text.