Stress isolation process

A stress-isolated microelectromechanical systems (MEMS) device, comprising:

• a substrate comprising a first portion and a second portion, wherein the first portion of the substrate is:
• separated from the second portion of the substrate by a stress isolation gap;
• and
• connected to the second portion of the substrate by one or more tethers;
• a MEMS device on the first portion of the substrate;
• and
• an electrical connection, wherein the electrical connection:
• spans the stress isolation gap;
• and
• does not align with any tether of the one or more tethers,
• wherein the stress isolation gap comprises a cavity in the substrate below the first portion of the substrate.

A stress-isolated microelectromechanical systems (MEMS) semiconductor device, comprising:

• a peripheral region;
• a platform separated from the peripheral region by a stress isolation gap;
• at least one tether suspending the platform from the peripheral region;
• a MEMS device disposed on the platform;
• and
• an electrical jumper spanning the stress isolation gap,
• wherein the stress isolation gap comprises a cavity in a bulk semiconductor material, the cavity disposed below the platform.