Methods of manufacturing a perovskite optoelectronic device

Method of manufacturing an optoelectronic device, comprising steps of:

• providing a substrate;
• depositing a first electrode layer on said substrate;
• depositing a first charge-carrier selective layer-carrier selective layer on said first electrode layer;
• depositing a perovskite-based semiconductor layer on said first charge-carrier selective layer;
• depositing a second charge-carrier selective layer with a thickness less than 5 nm on said perovskite layer;
• depositing insulating silicon oxide nanoparticles directly on said second charge-carrier selective layer, said particles having an average diameter between 10 nm and 100 nm;
• depositing a second electrode layer directly on said second charge-carrier selective layer and on said nanoparticles, said second electrode layer being in intimate contact with said second charge-carrier selective layer and said nanoparticles.

Method of manufacturing an optoelectronic device, comprising steps of:

• providing a substrate;
• depositing a first electrode layer on said substrate;
• depositing a first charge-carrier selective layer on said first electrode layer;
• depositing a perovskite-based semiconductor layer on said first charge-carrier selective layer;
• depositing insulating silicon oxide nanoparticles directly on said perovskite-based semiconductor layer, said particles having an average diameter between 10 nm and 100 nm;
• depositing a second charge-carrier selective layer with a thickness less than 5 nm on said perovskite layer and on said insulating silicon oxide nanoparticles, said second charge-carrier selective layer being in intimate contact with said perovskite layer and said insulating silicon oxide nanoparticles;
• depositing a second electrode layer directly on said second charge-carrier selective layer.

Method of manufacturing an optoelectronic device, comprising steps of:

• providing a substrate;
• depositing a first electrode layer on said substrate;
• depositing insulating silicon oxide nanoparticles directly on said first electrode layer, said particles having an average diameter between 10 nm and 100 nm;
• depositing a first charge-carrier selective layer with a thickness less than 5 nm on said first electrode layer and on said insulating silicon oxide nanoparticles, said first charge-carrier selective layer being in intimate contact with said first electrode layer and said insulating silicon oxide nanoparticles;
• depositing a perovskite-based semiconductor layer on said first charge-carrier selective layer;
• depositing a second charge-carrier selective layer on said perovskite layer;
• depositing a second electrode layer on said second charge-carrier selective layer.

Method of preventing electrical shunts in a perovskite-based optoelectronic device comprising a self-assembled monolayer charge-carrier selective layer in direct contact with an electrode layer, said method comprising a step of depositing insulating nanoparticles having a diameter between 10 nm and 100 nm directly on at least one of:

• a charge-carrier selective layer with a thickness less than 5 nm upon which a perovskite layer is subsequently deposited;
• a perovskite layer upon which a charge-carrier selective layer with a thickness less than 5 nm is subsequently deposited;
• a charge-carrier selective layer with a thickness less than 5 nm upon which an electrode layer is subsequently deposited;
• an electrode layer upon which a charge-carrier selective layer with a thickness less than 5 nm is subsequently deposited.