Chemical mechanical polishing apparatus

A chemical mechanical polishing apparatus, comprising:

• a turntable;
• a CMP pad installed on an upper surface of the turntable;
• a polishing head disposed above the turntable and contacting a wafer with the CMP pad, wherein the polishing head is configured to press the wafer against the CMP pad;
• a slurry supply unit configured to supply a slurry to the CMP pad;
• a temperature control unit disposed between the slurry supply unit and the polishing head,
• wherein the temperature control unit includes
• a body configured to be positioned above the CMP pad;
• and
• a plurality of heating members disposed on a bottom surface of the body configured to heat the CMP pad,
• wherein a temperature of a first region, heated by at least a portion of the plurality of heating members is different from a temperature of a second region, heated by the remaining heating members.

A chemical mechanical polishing apparatus, comprising:

• a turntable;
• a polishing head above the turntable;
• a slurry supply unit configured to supply a slurry;
• and
• a temperature control unit including a body having a plurality of suction ports and one or more heating members on a surface of the body proximal to the turntable, wherein the temperature control unit is between the slurry supply unit and the polishing head.