Method and apparatus for a silicon die preparation including auxetic and electrostatic dissipatative features

Abstract

The disclosure is directed to a silicon bridge die package, a dicing-die attach film structure and a method for silicon processing including a silicon bridge die package including at least two silicon die incorporating a plurality of integrated circuits, an embedded multi-die interconnect bridge coupled to the at least two silicon die, a dicing-die attach film (DDAF) structure coupled to a silicon wafer, an electro-static discharge (ESD) preventative within the DDAF structure to prevent static charge within the DDAF structure, and an auxetic material disposed within the DDAF structure configured to prevent dicing errors. A method for preparing a silicon die for singulation includes applying an auxetic material with an ESD preventative additive to an organic resin to form a DDAF, combining the DDAF with an acrylic adhesive and a polyolefin base film, and mounting the DDAF to the silicon die.

Dependencies are inferred from the claim text.