Top contact on resistive random access memory

A memory device comprising:

• a trench to a first electrically conductive structure;
• a first electrode of an electrically conductive material present at a base of the trench in electrical communication with the first electrically conductive structure;
• a switching layer of a conformal material present in the trench on the first electrode, the switching layer present on sidewalls of the trench and the switching layer extending outside the trench;
• a second electrode is present on the switching layer overfilling the trench;
• and
• a contact positioned on a portion of the second electrode that is overfilling the trench to provide that the contact is horizontally offset from the first electrode that is present in the trench.

A method of forming a memory device comprising:

• forming a trench to an electrically conductive structure that is present at a base of the trench;
• forming a first electrode within the trench;
• filling the trench with a fill including a bilayer comprising of a switching layer that is present on the first electrode and a layer for a second electrode on the switching layer, wherein a portion of the bilayer extends outside of the trench;
• patterning a portion of the bilayer that extends outside the trench to provide a landing spot that is horizontally offset from the first electrode in the trench;
• and
• forming a contact to the landing spot.