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US 2024/0206348 A1Published application
Probabilistic and deterministic logic devices with reduced symmetry materials
AssigneeIntel Corporation
InventorsPunyashloka Debashis, Ian Alexander Young, Dmitri Evgenievich Nikonov, Chia-Ching Lin, Hai Li
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Abstract
In embodiments herein, probabilistic and deterministic logic devices include reduced symmetry materials, such as two-dimensional (2D) transition metal dichalcogenide (TMD) materials (e.g., NbSe2 or MoTe2).
Claims20
A probabilistic logic device comprising:
- a spin orbit (SO) layer comprising a reduced symmetry material;
- an insulating layer on the SO layer;
- a ferromagnetic (FM) material layer on the insulating layer;
- and
- a conductive electrode on the FM material layer.
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An integrated circuit device comprising:
- a plurality of probabilistic logic devices, at least one probabilistic logic device comprising:
- a spin orbit (SO) layer comprising a two-dimensional (2D) transition metal dichalcogenide (TMD) material;
- an insulating layer on the SO layer;
- a ferromagnetic (FM) material layer on the insulating layer;
- and
- a conductive electrode on the FM material layer.
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A deterministic logic device comprising:
- a magnetoelectric (ME) region comprising:
- an ME material layer;
- and
- a first ferromagnetic (FM) material layer on the ME material layer;
- a spin orbit (SO) region comprising:
- a spin orbital coupling layer comprising a reduced symmetry material;
- a spin coherent layer on the spin orbital coupling layer;
- a second FM material layer on the spin coherent layer;
- wherein the ME region and the SO region are magnetically coupled via the first FM material and the second FM material.
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Dependencies are inferred from the claim text.