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US 2024/0206347 A1Published application
Magnetic memory structure
AssigneeIndustrial Technology Research Institute
InventorsZiaur Rahaman Shakh, Jeng-Hua Wei, Siddheswar Maikap
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Abstract
A magnetic memory structure is provided. The magnetic memory structure includes a plurality of magnetic tunneling junction (MTJ) layers, and a plurality of heavy-metal layers. The plurality of MTJ layers includes: a pinned-layer; a barrier-layer formed under the pinned-layer; and a free-layer formed under the barrier-layer. The plurality of heavy-metal layers is disposed under the free-layer.
Claims23
A magnetic memory structure, comprising:
- a plurality of magnetic tunneling junction (MTJ) layers, comprising:
- a pinned-layer;
- a barrier-layer formed under the pinned-layer;
- and
- a free-layer formed under the barrier-layer;
- and
- a plurality of heavy-metal layers disposed under the free-layer.
4 more elements
A magnetic memory structure, comprising:
- a plurality of magnetic tunneling junction (MTJ) layers:
- a plurality of heavy-metal layers, disposed below the plurality of MTJ layers;
- and
- a conductive layer, disposed below the plurality of heavy-metal layers,
- wherein the plurality of heavy-metal layers comprises a first heavy-metal layer and a second heavy-metal layer, and the first heavy-metal layer and the second heavy-metal layer is separated by an oxide layer,
- wherein the first heavy-metal layer is disposed below the plurality of MTJ layers,
- wherein the conductive layer is disposed below the second heavy-metal layer,
- wherein an electric conductivity of the conductive layer is higher than an electric conductivity of the second heavy-metal layer.
5 more elements
Dependencies are inferred from the claim text.