Mram with a multi-component, multi-layer bottom electrode

Abstract

A magnetoresistive random access memory (MRAM) structure, a system, and a method of forming an MRAM structure. The MRAM structure may include a bottom electrode. The bottom electrode may include a diffusion barrier. The bottom electrode may further include a dielectric that surrounds one or more sidewalls of the diffusion barrier. The method may include depositing a first dielectric, where a metal component remains uncovered by the dielectric. The method may further include depositing a diffusion barrier on at least the metal component. The method may further include depositing an electrode layer on the first dielectric and the diffusion barrier, resulting in a bottom electrode comprising the electrode layer, the first dielectric, and the diffusion barrier.

Dependencies are inferred from the claim text.