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US 2024/0206342 A1Published application
Piezoelectric film, piezoelectric stack, piezoelectric element, and method for producing piezoelectric stack
AssigneeSumitomo Chemical Company, Limited
InventorsToshiaki KURODA, Kenji SHIBATA, Kazutoshi WATANABE, Takeshi KIMURA
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Abstract
There is provided a piezoelectric film, being a polycrystalline film comprised of potassium sodium niobate; containing at least one metal element selected from a group consisting of Cu and Mn; and having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.
Claims7
A piezoelectric film,
- being a polycrystalline film comprised of potassium sodium niobate;
- containing at least one metal element selected from a group consisting of Cu and Mn;
- and
- having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals, with respect to a concentration A of the metal element in a matrix phase of the crystals.
1 more element
A piezoelectric stack, comprising:
- a substrate;
- an electrode film provided on the substrate;
- and
- a piezoelectric film provided on the electrode film, the piezoelectric film being a polycrystalline film comprised of potassium sodium niobate,
- wherein the piezoelectric film contains at least one metal element selected from a group consisting of Cu and Mn, and
- a ratio of a concentration B of the metal element at grain boundaries of crystals constituting the piezoelectric film, with respect to a concentration A of the metal element in a matrix phase of the crystals, is 1.0 or less.
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A piezoelectric element, comprising:
- a substrate;
- a bottom electrode film provided on the substrate;
- a piezoelectric film provided at the bottom electrode film, the piezoelectric film being a polycrystalline film comprised of potassium sodium niobate;
- and
- a top electrode film provided on the piezoelectric film,
- wherein the piezoelectric film contains at least one metal element selected from a group consisting of Cu and Mn, and
- a ratio of a concentration B of the metal element at grain boundaries of crystals constituting the piezoelectric film, with respect to a concentration A of the metal element in a matrix phase of the crystals, is 1.0 or less.
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A method for producing a piezoelectric stack, comprising:
- depositing an electrode film on a substrate;
- and
- depositing a piezoelectric film on the electrode film, the piezoelectric film being a polycrystalline film comprised of potassium sodium niobate,
- wherein in the deposition of the piezoelectric film, the piezoelectric film is deposited by a sputtering method using a target material in which at least one metal element selected from a group consisting of Cu and Mn is dissolved in a matrix phase, the piezoelectric film having 1.0 or less ratio of a concentration B of the metal element at grain boundaries of crystals constituting the piezoelectric film, with respect to a concentration A of the metal element in a matrix phase of the crystals.
1 more element
Dependencies are inferred from the claim text.