Metal-oxide blocking layers deposited via atomic layer deposition for organic light emitting diodes

An organic light emitting device (OLED), comprising:

• a first electrode;
• a MoOx buffer layer above the first electrode;
• a 2D blocking layer comprising metal oxide formed via atomic layer deposition (ALD) above and adjacent to the MoOx buffer layer;
• an emissive layer above the blocking layer;
• and
• a second electrode above the emissive layer.

An organic photodetector (OPD), comprising:

• a first electrode;
• a second electrode;
• an active layer between the electrodes comprising an organic donor layer and an organic acceptor layer;
• and
• a blocking layer between the active layer and one of the electrodes, comprising a metal oxide;
• wherein on reverse bias the OPD produces a photocurrent in response to absorbed radiation, and wherein the dark current for a given reverse bias is lower than for an identical device without the blocking layer.