Ferroelectric memory and forming method thereof, and electronic device

A ferroelectric memory, comprising:

• a substrate;
• and
• a plurality of memory cells, formed on the substrate, wherein each memory cell comprises:
• a first doped area and a second doped area that are formed in the substrate;
• a channel area, located between the first doped area and the second doped area;
• a ferroelectric layer, formed on the channel area, wherein the ferroelectric layer comprises a hafnium oxide-based material;
• a gate, formed on a side of the ferroelectric layer away from the substrate;
• a first isolation passivation layer, formed between the ferroelectric layer and the channel area;
• and
• a second isolation passivation layer, formed between the ferroelectric layer and the gate, wherein
• the first isolation passivation layer is configured to suppress diffusion of an oxygen element in the ferroelectric layer to the channel area, and the second isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the gate.

An electronic device, comprising:

• a processor;
• and
• a ferroelectric memory using, wherein
• the processor is electrically connected to the ferroelectric memory, and the ferroelectric memory comprises:
• a substrate;
• and
• a plurality of memory cells, formed on the substrate, wherein each memory cell comprises a ferroelectric capacitor, wherein
• the ferroelectric capacitor comprises:
• a first electrode and a second electrode that are stacked;
• a ferroelectric layer, formed between the first electrode and the second electrode, wherein the ferroelectric layer comprises a hafnium oxide-based material;
• a first isolation passivation layer, formed between the first electrode and the ferroelectric layer;
• and
• a second isolation passivation layer, formed between the second electrode and the ferroelectric layer, wherein
• the first isolation passivation layer is configured to suppress diffusion of an oxygen element in the ferroelectric layer to the first electrode, and the second isolation passivation layer is configured to suppress diffusion of the oxygen element in the ferroelectric layer to the second electrode.