Ferroelectric capacitors, transistors, memory devices, and methods of manufacturing ferroelectric devices
AssigneesSamsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
InventorSanghun JEON
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Abstract
The present invention relates to ferroelectric capacitors, transistors, memory device, and method of manufacturing ferroelectric devices. The ferroelectric capacitor includes a first electrode, a second electrode facing the first electrode, a ferroelectric layer between the first electrode and the second electrode, and an interfacial layer between the ferroelectric layer and the first electrode or between the ferroelectric layer and the second electrode. The ferroelectric layer includes hafnium-based oxide. The interfacial layer includes HfO2.
Claims20
A ferroelectric capacitor for a memory device, the ferroelectric capacitor comprising:
- a first electrode;
- a second electrode facing the first electrode;
- a ferroelectric layer between the first electrode and the second electrode, the ferroelectric layer including a hafnium-based oxide;
- a first interfacial layer directly between the ferroelectric layer and the first electrode such that the first interfacial layer directly contacts both the first electrode and the ferroelectric layer;
- and
- a second interfacial layer directly between the ferroelectric layer and the second electrode such that the second interfacial layer directly contacts both the second electrode and the ferroelectric layer,
- wherein each of the first interfacial layer and the second interfacial layer is HfO2,
- wherein each of the first interfacial layer and the second interfacial layer has a thickness in a range of more than 5 Å up to 200 Å, and
- wherein the ferroelectric layer includes a different material composition than the first and second interfacial layers.
A method of manufacturing a ferroelectric capacitor, the method comprising:
- forming a first electrode;
- forming a first interfacial layer on the first electrode, the first interfacial layer is HfO2 and has a thickness in a range of more than 5 Å up to 200 Å;
- forming a ferroelectric layer on the first interfacial layer such that the first interfacial layer directly contacts both the first electrode and the ferroelectric layer, the ferroelectric layer including a hafnium-based oxide;
- forming a second interfacial layer on the ferroelectric layer, the second interfacial layer is HfO2 and has a thickness in a range of more than 5 Å up to 200 521 ;
- and
- forming a second electrode on the second interfacial layer such that the second interfacial layer directly contacts both the second electrode and the ferroelectric layer,
- wherein the ferroelectric layer includes a different material composition than the first and second interfacial layers.
Dependencies are inferred from the claim text.